Mass enhancement of two-dimensional electrons in thin-oxide Si-MOSFET’s
نویسندگان
چکیده
منابع مشابه
Magnetoresistance of Si(001)MOSFETs with high concentration of electrons
We present an experimental study of electron transport in inversion layers of high-mobility Si(001) samples with occupied excited subbands. The second series of oscillations, observed in addition to the main series of Shubnikov-de Hass oscillations, is tentatively attributed to the occupation of a subband associated with the E0′ level. Besides, a strong negative magnetoresistance and nonlinear ...
متن کاملOxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime
Thermal oxidation process of silicon carbide (SiC) has been studied by performing in-situ spectroscopic ellipsometry. In our previous work, we, for the first time, found that the growth rates of SiC(0001̄) C-face at oxidation thicknesses less than around 20 nm are much higher than those given by the Deal-Grove (D-G) model. In this report, we show that such a growth rate enhancement occurs also i...
متن کاملCyclotron resonance for two-dimensional electrons on thin helium films
We present a systematic investigation of the microwave absorption for two-dimensional electron layers on thin helium films and in the presence of a cyclotron resonance ~CR! magnetic field. To explain the measured data, a recently proposed two-fraction structure of the electron system is used and here described in detail. Hereby the problem of substrate roughness, usually always present for elec...
متن کاملTransport in Thin-Body MOSFETs Fabricated in Strained Si and Strained Si/SiGe Heterostructures on Insulator
The combination of channel mobility enhancement techniques such as strain engineering, with non-classical MOS device architectures, such as ultra-thin body or multiple-gate structures, offers the promise of maximizing current drive while maintaining the electrostatic control required for aggressive device scaling in future CMOS technology nodes. Two structures that combine strain engineering an...
متن کاملInteracting One-Dimensional Electrons Driven by Two-Dimensional Reservoir Electrons
We derive an effective 1D theory from the Hamiltonian of the 3D system which consists of a mesoscopic conductor and reservoirs. We assume that the many-body interaction have the same magnitude in the conductor as that in the reservoirs, in contrast to the previous theories which made the ad hoc assumption that the many-body interaction were absent in the reservoirs. We show the following: (i) T...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 1999
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.59.10208